MOS晶体管技术

MOS transistor technology

简要回顾MOS晶体管一些具有代表性的技术进展,分析了其在将来超大规模集成电路(ULSI)应用中的主要限制。从材料以及器件结构两个方向分别阐述了突破现有MOS技术而最有希望被将来ULSI工业所采用的新型晶体管技术。

This paper briefly reviewed some of the MOS transistors representative of the technical progress. The main constraints of its applications in the future ultra-large-scale integrated circuits （ULSI） are analyzed. New transistor technology, separately elaborated the breakthrough in the current MOS technology from the materials and the devices structure, are introduced. Three-dimensional transistor structure may be the most promising technology in the future ultra-large-scale integrated circuits （ULSI）.