摘要
采用溶胶-凝胶法在Si片、已镀SiO2的钠钙硅玻璃和普通钠钙硅玻璃上镀Sb掺杂摩尔分数为8%的SnO2薄膜(ATO),在450℃热处理温度下对薄膜结构,电学、光学性能进行表征。结果表明:薄膜以四方金红石结构存在,结晶完全;方阻值随镀膜层数的增加而明显降低,12层时薄膜最低方阻值为129Ω/□,可见光平均透过率在75%以上。随着波长的增大,红外波段的反射率逐渐增大,从15%增加到55%左右。
The 8% antimony-doped tin （ATO） thin films were deposited on silicon substrates, glass substrates with and without SiO2-coated by sol-gel process with annealing temperature of 450℃. The structural, electrical and optical properties of the thin films were studied in details. The X-ray diffraction （XRD） analysis revealed that the thin films retained the tetragonal rutile structure as undoped ones. The sheet resistivity decreased obviously with the increase of the thickness, which was around 129Ω/□ with 12 layers. The average transmittance in the visible range was above 75 %, and the reflectance in the infrared range for ATO films on Si substrates increased from 15% to 55% with the increase of the wavelength.
出处
《光学仪器》
2008年第3期68-72,共5页
Optical Instruments
基金
2006年粤港关键领域重点突破资助项目(200649851105)
