摘要
利用SILEX-I装置打靶产生的亚皮秒X射线源研究了X射线分幅相机不同直流偏置下的选通特性。建立了曝光时间的X射线点源测量方法,基于系统原理定义了相机的动态增益。实验发现:与不加直流偏置相比,加载-100 V时曝光时间展宽10 ps,动态增益增大到4.5倍。动态增益增幅较理论模拟值偏大,加载负偏压可能改变了初始光电子的动力学特性。
The picosecond gated characteristics of X-ray framing camera at different DC bias are examined using sub-ps X-ray source produced by SILEX-I facility. The point-source measurement of XFC exposure-time is set up. The dynamic gain is defined based on the XFC principium. The experiment shows that the widening of exposure-time is 10 ps at DC bias of -100 V, and the dynamic gain increases by a factor of 3.5. The amplitude of exposure-amount measured is on the high side at DC negative bias, It is possible that the DC bias influences the dynamics of original photoelectrons, and induces dynamic gain exaltation.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2008年第6期948-950,共3页
High Power Laser and Particle Beams
基金
国家高技术发展计划项目