X射线分幅相机不同直流偏置下的皮秒选通特性

Picosecond gated characteristics at different DC bias of X-ray framing camera

利用SILEX-I装置打靶产生的亚皮秒X射线源研究了X射线分幅相机不同直流偏置下的选通特性。建立了曝光时间的X射线点源测量方法,基于系统原理定义了相机的动态增益。实验发现:与不加直流偏置相比,加载-100 V时曝光时间展宽10 ps,动态增益增大到4.5倍。动态增益增幅较理论模拟值偏大,加载负偏压可能改变了初始光电子的动力学特性。

The picosecond gated characteristics of X-ray framing camera at different DC bias are examined using sub-ps X-ray source produced by SILEX-I facility. The point-source measurement of XFC exposure-time is set up. The dynamic gain is defined based on the XFC principium. The experiment shows that the widening of exposure-time is 10 ps at DC bias of -100 V, and the dynamic gain increases by a factor of 3.5. The amplitude of exposure-amount measured is on the high side at DC negative bias, It is possible that the DC bias influences the dynamics of original photoelectrons, and induces dynamic gain exaltation.