GaAs基InAs量子点中类氢杂质的束缚能

Binding energy of hydrogen-like impurity in InAs/GaAs quantum dot

在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.

The binding energies of the ground state and the low-lying excited states of hydrogen-like impurity in a InAs/GaAs quantum dot are investigated by applying the effective mass approximation and the perturbation. In the two-dimensional polar coordinate, the electron Schrodinger equation is solved exactly in a parabolic confinement potential. The numerical results show that the binding energies of the ground state and the low - lying excited states of hydrogen-like impurity sensitively depend on the frequency of the parabolic confinement potential and the spectrum is shifted forward to the blue because of hydrogen-like impurites. These results are useful for designing and fabricating the QD devices.