摘要
采用射频网络法分析了ZnO薄膜体声波谐振器的谐振特性,并考虑了介质声损耗对品质因数Q值的影响。采用硅体刻蚀工艺在硅基片上制备了以ZnO薄膜为压电膜的薄膜体声波谐振器,并对器件的性能进行了测试。将实验与理论分析结果进行对比,发现实验器件的谐振频率与理论值一致,但器件Q值却比理论值低,进一步的分析揭示了实际器件Q值偏低的原因。
Resonant properties of a ZnO film bulk acoustic resonator （FBAR） was analyzied based on RF network method. The attenuation of the acoustic media was also taken into account for Q evaluation. Some FBAR samples were developed by using micro-machining silicon processes. They were also tested and measured. It was found that the measured resonant frequencies were in agreement with the theoretical predictions, but the measured Q was much lower. Further investigations revealed the factors which could affect Q of the devices.
出处
《压电与声光》
CSCD
北大核心
2008年第4期387-389,413,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(90607012)
