摘要
采用溶胶-凝胶法在Si/Si3N4/Poly-Si/Ti/Pt基片上制备PZT压电薄膜,为了选择更适合微电子机械系统(MEMS)器件的压电薄膜,采用一般热处理和快速热处理对锆钛酸铅(PZT)压电薄膜进行干燥和结晶。首先,采用V(H2O):V(HCL):V(HF)=280 mL:120 mL:4drops(4滴HF溶液)配比的腐蚀液在室温下对未结晶的PZT压电薄膜进行了湿法腐蚀微细加工;然后,对图形化好的压电薄膜进行再结晶的热处理,实验结果表明这种方法可用于压电薄膜微器件的制备。
Lead zirconate titanate (PZT) ferroelectric thin films were prepared by Sol-Gel technology on the Si/ Si3N4/Poly-Si/Ti/Pt substrate. In order to find a more suitable preparation method of piezoelectric film MEMS (Micro-Electrical-Mechanical-System) devices, the commonly and celerity heat treatment were adopted for torrefaction and crystal of PZT thin film. At first, the unrecrystallized PZT thin films were etched by V(H2 O) :V( HCL): V(HF) = 280 mL:120 mL:4drops solutes at room temperature. We find that the unrecrystallized PZT thin films can be easily wiped off and have a good figuring effect. Then these patterned PZT films were recrystallized. The experiment results indicate that this disposing mode can be applied in the piezoelectric thin film micro-device manufacturing.
出处
《压电与声光》
CSCD
北大核心
2008年第4期453-455,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(90207022)
武器装备预研基金资助项目(51411040105DZ0141)
关键词
锆钛酸铅(PZT)
压电薄膜
微传感器
湿法化学刻蚀
lead zirconate titanate (PZT)
piezoelectric thin film
micro-sensor
wet chemical etching