摘要
研究了Bi2O3-V2O5、CuO-Bi2O3-V2O5、Li2CO3-V2O5掺杂对Mg4Nb2O9陶瓷烧结特性和微波介电性能的影响。通过XRD分析材料物相组成,结果表明,CuO-Bi2O3-V2O5、Bi2O3-V2O5的添加能有效地将Mg4Nb2O9陶瓷烧结温度从1 350℃降至950℃,但同时陶瓷的品质因数(Q.f)有很大恶化。掺杂w(Li2CO3-V2O5)=3%,试样致密化温度降至950℃,保温5 h,其具有良好的微波介电性能:介电常数(rε)为14.0,Q.f为83 276 GHz。
The influence of Bi2O3-V2O5、CuO-Bi2O3-V2O5、Li2CO3-V2O5 doping on the sintering behavior and microwave dielectric properties of Mg4 Nb2O9 ceramics was investigated. The crystalline structure was studied by XRD. It is founded that the sintering temperature of the specimens could be reduced from 1 350℃ to 950 ℃ with Bi2 O3-V2O5 ,CuO-Bi2 O3-V2O5 doping, but the Q · f values were deteriorated. If the densification temperature of the specimen with 3% of Li2CO3-V2O5 dopants was reduced to 950 ℃ and soaked for 5 h, the optimum microwave dielectric properties with εr = 14 and Q · f =83 276 GHz could be obtained.
出处
《压电与声光》
CSCD
北大核心
2008年第4期462-464,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(50572059)
关键词
微波介质陶瓷
介电性能
低温烧结
铌酸镁
microwave dielectric ceramics
dielectric properties
low temperature sintering
Mg4 Nb2 O9
