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环形波导等离子体源阻抗特性的研究 被引量：2

CHARACTERIZATION OF THE IMPEDANCE OF ANNULAR WAVEGUIDE PLASMA SOURCE
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摘要 采用微波三探针研究了环形波导等离子体源阻抗特性随运行参数的变化。分析了微波等离子体源的阻抗特性。该方法有助于微波等离子体特性的研究和实现快速阻抗调配。 A microwave three probe system has been used to study the changes of annular waveguide plasma source impedance with operational parameters.The characterization of mircrowave plasma source impedance has been analyzed.The method is useful to the study of microwave plasma characterization and the realization of fast impedance matching.
作者 苏小保 邬钦崇 万元熙
机构地区 中国科学院等离子体物理研究所
出处 《真空与低温》 1997年第4期192-194,共3页 Vacuum and Cryogenics
关键词 环形波导 等离子体源 微波阻抗 微波三探针 Annular waveguide plasma source,Microwave impedance,Microwave three probes.
分类号 TN12 [电子电信—物理电子学] TN136 [电子电信—物理电子学]
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  • 2Ali M,ürgen M. Surface morphology,growth rate and qualityof diamond films synthesized in hot filament CVD system un.der various methane concentrations[J]. Applied Surface Sci.ence,2011,257(20):8420-8426.
  • 3Wako H,Abe T,Takagi T,et al. Comparison of diamond filmadhesion on molybdenum substrates with different surfacemorphologies[J]. Applied Surface Science,2009,256(5):1466-1471.
  • 4Zhang Q,Li H D,Cheng S H,et al. The effect of CO2 on thehigh-ratehomoepitaxialgrowthofCVDsinglecrystaldiamonds[J].DiamondandRelatedMaterials,2011,20(4):496-500.
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  • 7马志斌,张磊,翁国峰,等.高气压下微波等离子体化学气相沉积金刚石[C]//第十届全国新型炭材料学术研讨会,2011.
  • 8Yamada H,Chayahara A,Mokuno Y,et al. Simulation of mi.crowave plasmas concentrated on the top surface of a diamondsubstrate with finite thickness[J]. Diamond and related materi.als,2006,15(9):1383-1388.
  • 9FünerM,WildC,KoidlP.Simulationanddevelopmentofopti.mized microwave plasma reactors for diamond deposition[J].SurfaceandCoatingsTechnology,1999,116:853-862.
  • 10Gorbachev A M,Koldanov V A,Vikharev A L. Numericalmodeling of a microwave plasma CVD reactor[J]. Diamond andrelatedmaterials,2001,10(3):342-346.

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真空与低温
1997年 第4期

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