能带混合量子阱与异质谷间转移电子器件研究

Investigation on Band Mixing Quantum Well and Heterostructure Intervalley Transferred Electron Devices

介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。运用这一新物理效应设计制成了新的异质谷间转移电子器件。给出了器件连续波和脉冲工作时的射频振荡特性。使用多能谷有效质量理论和ＭｏｎｔｅＣａｒｌｏ模拟方法模拟计算了器件直流和射频工作状态下的电子运动过程。提出了新的器件射频工作模式。

The multivalley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.From this new physical principle,we have developed a new heterostructure intervalley transferred electron device(HITED).The radio frequency performance under continuous wave and pulse condition are shown respectively.By using the multivalley effective mass theory and the Monte Carlo simulation,the electronic process under direct current and radio frequency condition are simulated,from which a new dynamic mode of operation for HITED is proposed.Finally,the important role of band theory in developing semiconductor devices and the theoretical method to design new devices starting from the band theory are discussed.