摘要
沉积在云母片上的纯C60薄膜受20keV的Li+和N+2离子轰击,剂量在0.5×1016/cm2~5.0×1016/cm2之间改变,测量了离子注入后C60薄膜方块电阻随温度的变化,进而推导出C60薄膜电导率随温度和注入离子剂量的变化;分析了非原位测量中氧元素对电导率变化的影响以及能量较高的注入离子对C60薄膜的辐照损伤效应。研究结果表明,Li+注入对C60薄膜电导率的影响明显高于N+2注入的影响,并给出了不同离子注入条件下C60薄膜电导率随温度变化的函数关系式。
Pristine C 60 films sublimed onto sheel mica were implanted with 20keV Li + ions and N + 2 ions, respectively, at doses from 0 5×10 16 /cm 2 to 5 0×10 16 /cm 2 The change of electric conductivity with temperature of the films was measured. The effects of oxygen and irradiation damage on the films were analysed. It is shown that the impact of Li + ions is more obvious than that of N + 2 ions, and a functional relation between electric conductivity and temperature is given for C 60 films ion-implanted on different conditions.
出处
《核技术》
EI
CAS
CSCD
北大核心
1997年第6期333-337,共5页
Nuclear Techniques
关键词
C_60薄膜
电导率
离子注入
C 60 film, Electric conductivity, Ion-implantation