硅中注 H^+ 气泡层的退火行为——气泡释放与表层剥离

Annealing behavior of bubble layer in Si formed by H^+ implantation-bubble releasing and flaking

室温下将能量为１４０ｋｅＶ、剂量为５×１０１６／ｃｍ２的Ｈ＋注入到硅单晶中，在硅表层下形成了气泡层。采用背散射与沟道技术、热波分析技术以及金相显微镜等分析测试手段，对气泡层的退火行为进行了研究。结果表明退火过程中存在一个临界温度（４２０℃），高于临界温度退火，样品表面会形成砂眼或发生薄层剥离现象，而且剥离块密度随退火温度的升高而增加；而在临界温度以下，气泡层对表层硅的单晶质量没有影响。热波测量的结果表明薄层剥离后在样品表面留下了粗糙的凹坑。还对样品注Ｈ＋并退火后硅表面薄层的剥离现象进行了讨论。

? The 140keV H+ with a dose of 5×1016/cm2 was implanted into Si wafer at room temperature, leading to the formation of a bubble layer beneath the surface, and the annealing behavior of the bubbles was investigated by the Rutherford backscattering and channeling spectrometry, thermal wave analysis technology and microscopy It was found that, above a critical annealing temperature, blistering and flaking will occur at the surface of the implanted sample, and the density of flaking increases with the increasing of annealing temperature Below this temperature, the crystalline character of the top Si layer is not influenced by the bubbles The thermal wave analysis results indicate that the bottom of flaking area is irregular The blistering and flaking phenomena of the implanted samples were also discussed