MBE生长的In_(1-x-y)Ga_xAl_yAs/InP四元混晶的拉曼散射

Optical Phonon Raman Scattering from In 1-x-y Ga xAl yAs/InP Quaternary Alloys

ＭＢＥ生长的Ｉｎ１－ｘ－ｙＧａｘＡｌｙＡｓ／ＩｎＰ四元混晶的拉曼散射韩和相汪兆平李国华徐士杰刘南竹朱作明（中国科学院半导体研究所半导体超晶格国家重点实验室北京１０００８３）ＯｐｔｉｃａｌＰｈｏｎｏｎＲａｍａｎＳｃａｔｅｒｉｎｇｆｒｏｍＩｎ１－ｘ－ｙＧ...

Abstract Optical phonon Raman scattering from In 1-x-y Ga xAl yAs/InP quaternary alloy grown on InP substrate by molecular beam epitaxy are reported in this contribution. The dominant bands observed from the quaternary alloy are of the GaAs ,InAs and AlAs like optical phonon mode vibrations. The dependence of the relative intensity and Raman frequency shifts of the optical phonon modes on the compositions are presented.