硅刻蚀的现场拉曼光谱研究

In Situ Raman Spectroscopyic Study of Silicon Etching in HF Solutions

硅刻蚀的现场拉曼光谱研究刘峰名任斌汤儆田中群（厦门大学固体表面物理化学国家重点实验室，化学系，物理化学研究所厦门３６１００５）ＩｎＳｉｔｕＲａｍａｎＳｐｅｃｔｒｏｓｃｏｐｙｉｃＳｔｕｄｙｏｆＳｉｌｉｃｏｎＥｔｃｈｉｎｇｉｎＨＦＳｏｌｕｔｉｏｎｓＦ．...

Abstract In situ Raman spectra of SiH x vibration modes for silicon electrodes in dilute aqueous HF solutions are reported for the first time using a highly sensitive confocal Raman microprobe system. It has been found that the intensity of SiH 2 vibration band increases while that of Si Si vibration band decreases in the photo etching process, which can be assigned to the laser induced oxidation and the aggressive attack of HF at the silicon surface. Some possibe explanations were considered for the enhanced background.