摘要
生长了新型激光晶体Pr:GdVO4,经XRD分析可知生长的晶体与纯GdVO4晶体结构一致,晶体质量良好。室温下测试了晶体400~3000nm范围内的吸收光谱。通过对吸收光谱研究,发现σ谱图中各吸收峰吸收强度更大,宜选择入射光传播方向和电矢量均垂直于光轴的方向进行激光实验。采用404nm的激发源抽运Pr:GdVO4晶体,测试其荧光光谱,发现其在可见波段有宽且强荧光发射(604nm、616nm),对应于1D2→3H4。比较不同浓度晶体的荧光谱,荧光强度呈现如下趋势:0.5%>0.7%>0.32%。
Pr:GdVO4 crystals were grown by Czochraliski method.The structure of the crystals were studied by XRD,and the results confirmed that their structure were the same with the pure GdVO4 crystal.The Absorption spectrum had been measured from 400 nm to 3000 nm at room temperature.We find that the strength of each Absorption peak is much stronger in σ-Absorption-spectrum,so we had better do laser experiments while incident ray and the direction of electric complexor plumb with ray axis.The fluorescence excited by 404 nm laser was recorded separately.We find that there is a wide and powerful fluorescence-emission band in visual field(604 nm,616 nm),corresponding with ^1D2→^3H4.Comparing fluorescence spectra of different doping-content crystals,the fluorescence intensity appeared as follows:0.5%〉0.7%〉0.32%.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第3期528-531,共4页
Journal of Synthetic Crystals