在硅衬底上制备Si纳米线及其表征

Preparation and Characterization of Silica Nanowires on the Silica Substrate

采用以硅衬底为硅源的简单方法,在蘸有一层催化剂(0.05MFeCl2.6H2O)薄膜的硅基片上直接制备了大量的单晶Si纳米线。用扫描电子显微镜(SEM)、透射电子显微镜(TEM)分别观察了硅纳米线的形貌及单根Si纳米线的显微结构。试验结果表明:随着温度的升高,纳米线的直径增大;催化剂是Si纳米线生成的重要因素,没有沉积催化剂的硅基片上不会有硅纳米线的生成,且该硅纳米线的生长机理为典型的气-液-固模式。

A simple method to synthesize single crystal silicon nanowires（SiNWs）on the iron-deposided silicon substrate by a catalytic（0.05 M FeCl2·6H2O）is reported in this paper.The morphologies and microstructures of the as-grown products were determined by scanning electron microscopy（SEM）,transmission electron microscopy（TEM）and energy dispersive X-ray detector（EDX）.The results show that diameters of SiNWs increased with the temperature increasing and catalytic is a key factor for the growth of SiNWs.There are not SiNWs on the substrate without treated by iron-deposided and the growth model of SiNWs is vipor-liquid-solid mechanism.