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锆钛酸钡陶瓷的制备与介电性能研究 被引量:6

Preparation and Study on dielectric properties of Ba(Zr_xTi_(1-x))O_3 ceramic
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摘要 采用传统电子陶瓷工艺,制备了Ba(ZrxTi1-x)O3(BZT,x=0.20,0.25,0.30)铁电陶瓷,研究了不同Zr含量对陶瓷微观结构、介电性能和介电可调度的影响.结果表明,不同频率下陶瓷样品的介电温谱显示Ba(ZrxTi1-x)O3材料具有弥散相变的特征,当x=0.3时,已成为典型的弛豫型铁电体;温度为193~323K时,材料的介电可调度测量表明所有样品介电可调度均在10%以上,且在铁电态和居里温区附近介电可调度明显高于顺电态.从铁电畴、极性纳米微区的角度出发对实验结果进行了解释.发现室温(300K)时样品x=0.25的介电可调度可达49.5%,优化因子为49.11(1.5kV/mm,10kHz). Ba(ZrxTi1-x)O3(BZT,x=0.20,0.25,0.30) ceramics are prepared by using a traditional ceramic processing. The effects of the concentration of Zr on the microstructures, dielectric properties and tunability of BZT ceramics are investigated. The dielectric constants as a function of temperature at different frequencies show that the ceramics have characteristics of ferroelectrics with diffused phase transition, and the ceramic sample of x = 0. 3 exhibites a typical relaxor ferroelectric behavior. In the range of temperature from 193 to 323 K, the dielectric tunabilities of all the samples can reach above 10% and is a little stronger in ferroelectric state than that of paraelectric state. The experimental results is explained with the points of ferroelectric domains and Nano-micro-polarity. The tunabilities and the figure of merit measured at 300 K under the biasing field of E=1. 5 kV/mm for x=0.25 are 49.5% and 49.11.
出处 《陕西师范大学学报(自然科学版)》 CAS CSCD 北大核心 2008年第4期28-31,共4页 Journal of Shaanxi Normal University:Natural Science Edition
基金 国家自然科学基金资助项目(50572059)
关键词 锆钛酸钡 相变弥散 介电可调度 优化因子 Ba(Zrx Ti1-x) O3 diffuse phase transition dielectric tunability figure of merit
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  • 1Campbell C K, Vanwyk J D, Holm M F K, et al. High field capacitance-temperature behavior of BaTiO3 ceramic disc capacitors [ J ]. IEEE Transactions on Components and Packaging Technologies, 1990, 13 (4): 1 124- 1 127.
  • 2Babbit R W, Koscica T E, Drach W C. Planar microwave electro-optic phase shifters [ J ]. Microwave Journal, 1992(6): 63-79.
  • 3Varadan V K, Jose K A, Varadan V V, et al. A novel microwave planar phase shifter[J]. Microwave Journal, 1995, 11:244-254.
  • 4Wu T B, Wu C M, Chen M L. Highly insulative barium zireonate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications [ J ].Applied Physics Letters, 1996, 69:2 659-2 661.
  • 5Tagantsev A K, Sherman V O, Astafiev K F, et al. Ferroelectric Materials for Microwave Tunable Applications [ J ]. Journal of Electroceramics, 2003,11:5.
  • 6Xu J, Menesklou W, Iverstiffee E, Annealing effects on structural and dielectric properties of tunable BZT thin films [J]. Journal of Electroceramics, 2004, 13 (1/3) :229-233.
  • 7Zhi Y, Chen A, Guo R, et al. Dielectric properties and high tunability of Ba ( Ti0.7 Zr0.3 ) 03 ceramics under de electric field [J]. Applied Physics Letters, 2002, 81.1 285-1 287.
  • 8Santos I A, Eiras J. A Phenomenological description of the diffuse phase transition in ferroelectrics [J]. Journal of Physics: Condensed Matter,2001,13:11 733-11 740.
  • 9Hennings D, Schnell A, Simon G. Diffuse Ferroelectric Phase Transitions in Ba ( Ti1-y Zry ) O3 Ceramics [ J ]. Journal of the American Ceramic Society, 1982, 65:539-544.
  • 10Wei X Y, Yao X. Nolinear dielectric properties of barium strontium titanate ceramics [J]. Material Science and Engineering (B), 2003,99 : 74-78.

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