摘要
Influences of the carrier concentration and mobility of heavily doped n-type Si80 Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoeleetrieal power factors of 32- 36μWem-1K^-2 eouM be consistently achieved with carrier concentrations of 2.1-2.9 × 10^20cm^-3 and carrier mobilities of 36-40 cm^2 V^-1s^-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.
Influences of the carrier concentration and mobility of heavily doped n-type Si80 Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoeleetrieal power factors of 32- 36μWem-1K^-2 eouM be consistently achieved with carrier concentrations of 2.1-2.9 × 10^20cm^-3 and carrier mobilities of 36-40 cm^2 V^-1s^-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.
基金
Supported by the National Natural Science Foundation of China under Grant No 60176004, and the Hi-Tech Research and Development Programme of China under Grant No 2002AA302406.
