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High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170 GHz and fmax=253 GHz 被引量：8

High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170 GHz and fmax=253 GHz
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摘要 The layer structure of InGaAs/InP double heterojunction bipolar transistor （DHBT） is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6 V. The current gain cutoff frequency is as high as 170 GHz and the maximum oscillation frequency reached 253 GHz. The DHBT with such high performances can be used to make W-band power amplifier. The layer structure of InGaAs/InP double heterojunction bipolar transistor （DHBT） is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6 V. The current gain cutoff frequency is as high as 170 GHz and the maximum oscillation frequency reached 253 GHz. The DHBT with such high performances can be used to make W-band power amplifier.
作者 金智 苏永波 程伟 刘新宇 徐安怀 齐鸣
机构地区 Institute of Microelectronics State Key Lab of Fhnctionai Materiais for Informatics
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2008年第7期2686-2689,共4页 中国物理快报（英文版）
关键词 the power-law exponents precipitation durative abrupt precipitation change the power-law exponents, precipitation, durative, abrupt precipitation change
分类号 TN3 [电子电信—物理电子学]
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参考文献10

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同被引文献17

  • 1程伟,金智,于进勇,刘新宇.含InGaAsP的InP DHBT复合式集电区结构设计[J].Journal of Semiconductors,2007,28(6):943-946. 被引量：3
  • 2D'Amore M, Monier C, Lin S, et al. A 0.25 mum InP DHBT 200GHz + Static Frequency Divider [ J ]. 2009 An- nual leee Compound Semiconductor Integrated Circuit Sym- posium - 2009 leee Csic Symposium, Technical Digest 2009, 2009 : 165 - 1 68.
  • 3Munkyo S, Urteaga M, Young A, et al. A 305-330 + GHz 2:1 Dynamic Frequency Divider Using InP HBTs [ J ]. IEEE Microwave and Wireless Components Letters, 2010: 468 - 470.
  • 4Knapp H, Meister T F, Liebl W, et al. 168 GHz dynamic frequency divider in SiGe:C bipolar technology [ J ]. 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2009:190 - 1931209.
  • 5Su Y, Jin Z, Cheng W, et al. An InGaAs/InP 40 GHz CML static frequency divider [ J ]. Journal of Semiconduc- tors, 2011 : 035008 (035004 pp. ).
  • 6Leijun X, Zhigong W, Qin L, et ai. Modelling and Design of a Wideband Marchand Balun [ J ]. 2010 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC 2010), 2010:1374 - 1377.
  • 7Sun J S, Chen G Y, Huang S Y, et al. The wideband marchand balun transition design [ J ]. 2006 7th Interna- tional Symposium on Antennas, Propagation and EM Theo- ry, Vols 1 and 2, Proceedings, 2006: 796- 799.
  • 8O. Kappeler, A. Leuther, W. Benz, et al. 108 GHz dy- namic frequency divider in 100 nm metamorphic enhance- ment HEMT technology [ J ] Electron. Lett., 2003, 39: 989 - 990.
  • 9Satoshi Tsunashima, Hiroki Nakajima, Eiichi Sano, et al. 90-GHz operation of a novel dynamic frequency divider u- sing InP/InGaAs HBTs [ J ]. 2002 Indium Phosphide and Related Materials conference, 2002:43 - 46.
  • 10Satoshi Tsunashima, Koichi Murata, Minoru Ida, et al. A 15p-GHz dynamic frequency divider using lnPllnGaAs DH- BTs [ J]. IEEE GaAs Digest, 2003:284 - 287.

引证文献8

二级引证文献11

Chinese Physics Letters
2008年 第7期

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