直流电沉积钴纳米线的生长取向控制

Growth Orientation Control of DC Deposition Cobalt Nanowire

目的通过调节沉积电流密度动态地控制钴纳米线择优生长方向,以制备磁性能良好的一维钴纳米线.方法利用制备出的带有高度有序性纳米孔的氧化铝模板,通过直流恒电流电化学沉积方法,调节沉积电流密度的大小,制备出一系列钴纳米线阵列,并利用XRD衍射仪和VSM振动磁强计测量其磁性能,包括矫顽力、剩磁比和各向异性的特点.结果制备出了包括[101]择优取向、[100]择优取向及非晶态等结构的一维Co纳米线阵列,重点分析了具有[101]择优取向纳米线阵列的特点.结论总结出了钴纳米线对于[101]晶向的易磁化规律.

Objective Via accommodating the density of the constant direct current to dynamically control the growth orientation of cobalt nano-line, thus to prepare one-dimensional cobalt nanowires with good magnetism, Methods Using the Зlumina cyclostyle with well-regulated nanobores to prepare cobalt nanowires, and then measuring the magnetic characteristics with XRD and VSM, including coercive force, remanence and characteristic of anisotropic. Results This experiment has prepared the cobalt nanowires arrays including preponderant growth orientation of [101] and [100], and then emphatically analysed the specialty of the nanowires arrays which have preponderant growth orientation of [101]. Conclusion According to the analysis, the easily magnetized rules of the nanowires growing preponderantly along direction of [101] are summed up.