甲基二苯基乙氧基硅烷饱和蒸汽压测定与关联

Measurement and correlation for saturated vapor pressure of diphenylmethylethoxysilane

通过减压精馏的方法得到高纯度的甲基二苯基乙氧基硅烷,使用精馏法测定了甲基二苯基乙氧基硅烷在0.04—23.03 kPa范围内的饱和温度数据。采用非线性回归方法,利用EVIEWS 5.0软件得到甲基二苯基乙氧基硅烷的Antoine常数A,B,C的值分别为7.026 9,2 372.59和181.47,安托尼方程计算出的饱和蒸汽压与实验数据的误差在0—5.56%之间,与文献值的误差不超过7.41。通过Clausius-Clapeyron方程计算得到甲基二苯基乙氧基硅烷在373.20—512.23 K范围内平均摩尔蒸发热为72 942.96 J/mol,常压沸点为556.20 K。

High purity diphenylmethylethoxysilane （DPMEOS） was obtained by vacuum distillation method and the saturated temperature of DPMEOS at varies saturated pressures of 0.04-23.03 kPa was determined by distillation method. The Antoine parameters of DPMEOS were regressed by nonlinear regression method with EVIEWS 5.0 software as A =7.026 882, B =2 372.59 and C = 181.47. The correlations between saturated vapor pressure and temperature were acquired with relative error from 0 to 5.56%. The average molar evaporation heat of 72 942.96 J/mol DPMEOS at 373.20 K to 512.23 K was estimated and obtained by Clausius-Clapeyron equation. The calculated normal boiling point of DPMEOS was 556.20 K, which was matched well with the calculated data registered in Seifinder scholar database with an error less than 7.41. The obtained Antoine parameters and the molar evaporation heat of DPMEOS are very useful for the design and operation of the rectifying tower.