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Bi掺杂Ba_(0.6)Sr_(0.4)TiO_3陶瓷的研究

The Study on Ba_(0.6)Sr_(0.4)TiO_3 Ceramics Doping with Bi
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摘要 本文采用传统的陶瓷工艺合成了Ba0.6Sr0.4TiO3陶瓷,研究了Bi掺杂对材料参数ε、tanδ和E的影响,并探讨了相关的掺杂改性机理。结果表明:适量的Bi能够改善陶瓷的介电性能,同时细化陶瓷的晶粒尺寸。 The effects of Bi doping on the Ba0.6Sr0.4TiO3 ceramics were studied, and the mechanism for modifying the properties and microstructure of the BST ceramics by doping of Bi2O3 was investigated. The results showed that proper Bi can improve dielectric properties and adjust the crystallite side for ceramics.
作者 王厚山
出处 《佛山陶瓷》 2008年第6期4-6,共3页 Foshan Ceramics
关键词 陶瓷 Ba0.6Sr0.4TiO3 掺杂 介电性能 ceramics, Ba0.6Sr0.4TiO3, dope, dielectric properties
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  • 1李卫,周科朝,杨华.氧化铋的应用研究进展[J].材料科学与工程学报,2004,22(1):154-156. 被引量:44
  • 2L. Zhou, P. M. Vilrinho, J. I. Baptista. Dielectric properties of bismuth doped Ba1-xSrxTiO3 ceramics[J]. J Eur Ceram Soc, 2001, 21(6) :532-534.
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  • 4J.Q. Qi, Z.L. Gui,Y.L. Wang, et al. Difference of Bi2O3 doping effect between vapor process and solid process on Ba1-xSrxTiO3 semiconducting ceramics[J]. Mater Sci&Engin B, 2002,95(4):283-286.

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