摘要
本文阐述了Ｅ型膜片的结构特性，根据其应力分布特点及硅材料在（１１０）晶面的＜１１１＞晶向上具有最大压阻系数，开展了力敏芯片的最佳设计，并进行了Ｅ型力敏器件的制作。最后给出了器件的主要技术指标。
This paper expounds the structure characteristic of the E-type silicon diaphragm. According to the E-type diaphragm stress profiles and the maximum piezoresistance coefficients for P-Si crystal along the <111> direction in the (110) plane, the optimum design for E-type silicon pressure sensors has been considered.The sensors were made and the main parameters were showed.
出处
《仪表技术与传感器》
CSCD
北大核心
1997年第9期34-36,共3页
Instrument Technique and Sensor
关键词
硅
差压
力敏器件
传感器
Silicon, Differential Pressure, Mechanical Sensor.
