摘要
由于具有高探测率、高可靠性以及可室温工作等特点,InGaAs红外探测器在航天遥感领域具有重要的应用,而平面型的InGaAs红外探测器是国际主流的结构,但是国内这一方面的研究却刚刚起步,文中通过闭管锌扩散方式制备了平面型In0.53Ga0.47As红外探测器八元线列,测试了器件的伏安特性,得到器件的暗电流在零偏压下平均值为6.5pA,-500mV下为18.2pA,并且通过对器件信号、噪声以及响应光谱的测试得到器件的峰值响应率,其平均值为8.11×1011cm·Hz1/2·W-1,不均匀性为4.69%。通过器件的优值因子R0A计算了器件理论峰值响应率,结果表明:理论峰值响应率平均值高于测试值,且不均匀性较大。通过拟合器件的伏安曲线分析了器件峰值响应率与理论值的差别。
InGaAs infrared photo-detector has many advantages such as high detectivity, high reliability, and working at room temperature, which provides important applications in space remote sensing area. Planar InGaAs infrared photo-detector is the prevailing structure in this area, however. A 8 element planar In0.53Ga0.47As photo-detector array was fabricated by sealed ampoule Zn diffusion technology. The currentvoltage measurement showed that the dark current of the device was 6.5 pA in average at 0 V and 18.2 pA at -500 mV. The peak detectivity was obtained by measuring the signal, noise and response spectrum of the device, meanwhile the average is 8.11×10^11 cm. Hz^1/2· W^-1 with non-uniformity of 4.69%.Then the theoretical peak responsibility was calculated from the figure of merit of the device RoA.The results reveale that the average of theoretical peak responsibility is bigger than the measured ones with greater non-uniformity. At last the discrepancy was analyzed by fitting the current-voltage curve of the device.
出处
《红外与激光工程》
EI
CSCD
北大核心
2008年第3期436-439,共4页
Infrared and Laser Engineering
