硫化时间对FeS_2薄膜结构和性能的影响

Influence of sulfuration time on the structure and properties of FeS_2 films

在硫化温度为653 K和硫化时间分别在3、6和12 h的条件下,用硫化铁膜法制备FeS2薄膜.通过对不同条件下制备的薄膜成分、结构和光电性能研究表明：当硫化时间大于6 h时,薄膜的成分接近理想化学配比,直接光学能带间隙大约为1.15-1.17 eV,电阻率约为1.3Ω.cm.

FeS2 films were prepared by sulfurizating Fe films at temperature of 653 K and time of 3, 6 and 12 hours. The composition, structure, electrical and optical properties of the films were investiga-ted. It is indicated that the composition of the films is close to stoichiometric, its direct bandgap is about 1.15- 1.17 eV and its resistivity is around 1.31Ω·cm when the sulfurization time is greater than 6h.