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A Novel CMOS Current Mode Bandgap Reference 被引量：8

一个新型CMOS电流模带隙基准源(英文)
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摘要 A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon,avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation,it can reach a temperature coefficient of 23ppm/℃ from 30 to 150℃ with a line regulation of 2. 1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference （without pad） is 0. 088mm^2. 介绍了一个新型电流模带隙基准源,该带隙基准源的输出基准可以设计为任意大于硅材料的带隙电压(1.25V)的电压,避免在应用中使用运算放大器进行基准电压放大.同时该结构消除了传统电流模带隙基准源的系统失调.该带隙基准源已通过UMC0.18μm混合信号工艺验证.在1.6V电源电压下,该带隙基准源输出1.45V的基准电压,同时消耗27μA的电流.在不采用曲率补偿的情况下,输出基准的温度系数在30℃到150℃的温度范围内可以达到23ppm/℃.在电源电压从1.6变化到3V的情况下,带隙基准源的输入电压调整率为2.1mV/ V.该带隙基准源在低频(10Hz)的电源电压抑制比为40dB.芯片面积(不包括Pads)为0.088mm2.
作者 幸新鹏 李冬梅 王志华
机构地区 清华大学微电子学研究所 清华大学电子工程系
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第7期1249-1253,共5页 半导体学报（英文版）
基金 国家自然科学科学基金(批准号:60475018) 北京市科技发展基金(批准号:D0305004040221-2-05)资助项目~~
关键词 CMOS bandgap reference current mode CMOS 带隙基准源 电流模
分类号 TN432 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献8

  • 1Jiang Y, Lee E K F. Design of low-voltage bandgap reference using transimpedance amplifier. IEEE Trans Circuits Syst II, 2000,47 : 552.
  • 2Banba H, Shiga H, Umezawa A, et al. A CMOS bandgap reference circuit with sub-1-V operation. IEEE J Solid-State Circuits, 1999, 34 : 670.
  • 3Leung K N,Mok P K T. A sub-1-V 15-ppm/C CMOS bandgap voltage reference without requiring low threshold voltage device. IEEE J Solid-State Circuits, 2002,37 : 526.
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同被引文献64

  • 1李浩亮,何乐年,严晓浪.一种高精度能隙基准电压电路[J].固体电子学研究与进展,2005,25(1):77-80. 被引量：5
  • 2许长喜.低压低功耗CMOS带隙电压基准及启动电路设计[J].Journal of Semiconductors,2005,26(10):2022-2027. 被引量：5
  • 3盛庆华,张亚君,王红义.一种线性补偿的带隙基准电路[J].微电子学与计算机,2007,24(1):169-172. 被引量：13
  • 4林双喜.用于LDO稳压器的CMOS基准电压源的设计[J].电子科技,2007,20(7):9-11. 被引量：6
  • 5Leung K N, Mok P K T, Leung C Y. A 2V 3uA 3ppm/℃ curvature- compensated BiCMOS bandgap reference [J ]. IEEE Journal of Solid - State Circuits, 1994,38 (3) : 561 - 564.
  • 6Wang Xichuan, Si Cuiying, Xu Xing. Curvature compensated CMOS bandgap reference with 1.8V operation[ C]//High Density Microsystem Design and Packaging and Component Failure Analysis, HDP'06. Shanghai, 2006: 20- 23.
  • 7Hou Ming Chen, Chih Liang Huang, Robert C Chang. A new temperaturecompensation CMOS bandgap reference circuit for portable applications[ C] // Circuits and Systems, ISCAS 2006. Proceedings. 2006 IEEE Intemational Symposium on. Island of KOS, 2006:4.
  • 8Banba H, Shiga H, Umezawa A, et al. A CMOS bandgap reference circuit with sub- 1 V operation[J]. IEEE Journal of Solid - state Circuits, 1999, 34(5) :670 - 674.
  • 9PLETERSEK A.A compensated bandgap voltage reference with sub-1-V supply voltage[J].Analog Integrated Circuits and Signal Processing,2005,44(1):5-15.
  • 10BANBA H,SHIGA H,UMEZAWA A,et al.A CMOS bandgap reference circuit with sub-1-V operation[J].IEEE Journal Solid State Circuits,1999,34 (5):670-674.

引证文献8

二级引证文献20

Journal of Semiconductors
2008年 第7期

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