摘要
用飞秒脉冲泵浦-探测技术通过时间分辨差分透射谱和透射衰减曲线研究了ZnSe0.2Te0.8/ZnTeII型多量子阱结构中热载流子的产生、弛豫及复合过程.观察到阱层和垒层中热载流子的形成,ZnTe垒层中热载流子在10ps左右会弛豫回ZnTe基态,并在10ps内注入到ZnSeTe阱层并辐射复合.
The generation, relaxation, and recombination of hot carriers in ZnSeTe/ZnTe type II multiple quantum well （MQW） structures are investigated using photoluminescence （PL） spectra and the femtosecond pulse pump-probe technique. The generation of hot carriers in barrier layers and well layers is observed by time-resolved differential transmission spectra. The cooling time of hot carriers in ZnTe layers is about 10ps. Carrier capturing from the ZnTe barrier layer to the ZnSeTe well layer is also in the time scale of 10ps.
