摘要
首次报道了通过引入ZnAl2O4缓冲层,以金属源化学气相外延法(MVPE)生长的ZnO晶体质量明显提高.ZnAl2O4缓冲层是通过对溶胶-凝胶法制备的ZnO薄膜进行高温退火而得到的.用双晶X射线衍射仪(DCXRD)对样品进行了θ-2θ和摇摆曲线测量,在ZnAl2O4缓冲层上生长的ZnO厚膜具有高度的择优取向性和良好的晶体质量(摇摆曲线半高宽为342″).用电子扫描显微镜(SEM)观察样品横截面,并测得样品厚度约为10μm.
High quality ZnO film of about 10μm thick has been successfully grown on a ZnAl2O4 buffer layer via metal vapor phase epitaxy （MVPE）. The ZnAl2O4 buffer layer was prepared by high temperature annealing ZnO thin film grown by the sol-gel method. Double crystal x-ray diffraction （DCXRD） analysis indicates that unwanted orientations in the film are eliminated using the buffer layer and that the full width at half maximum （FWHM） of the （0002） rocking curve dramatically drops from 1371＂ to 342＂. To our knowledge,this is the first report that a ZnAl2O4 buffer layer can enhance the quality of ZnO film grown by metal vapor phase epitaxy.
