摘要
在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术——注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度1μm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术.
On the basis of combining the advantages of low dose separation by implanted oxygen （SIMOX） technology and bonding technology,a new technology named SIMOX wafer bonding （SWB） for fabricating a thin film（thin top silicon layer）/thick buried oxide （BOX） SOI was investigated. A thin film/thick BOX SOl with SOI layer thickness of 130nm,BOX thickness of 1μm,and SOI layer thickness uniformity of ± 2% was fabricated with SWB technology. The surface morphology and structure of the thin film/ thick BOX SOI were characterized using cross-sectional transmission electron microscopy （XTEM） and atomic force microscopy （AFM） ,respectively. The results suggest that the SOI layer of SWB can maintain the thickness uniformity of SIMOX and SWB SOI have an atomic scale SO1 layer/BOX interface. Therefore,SWB is a promising technology for fabricating SOI material.
基金
国家自然科学基金资助项目(批准号:60476006)~~
