摘要
基于0.15μm GaAs pHEMT工艺,设计和制作了一款宽带单片集成低噪声放大器.放大器设计采用四级级联的拓扑结构以获得高增益.芯片尺寸2mm×1mm.实测性能指标为：工作频段45-65GHz,增益18±1.5dB,输入驻波比小于3,输出驻波比小于2.3,直流功耗96mW.在增益、带宽和功耗上达到国际现有产品指标.该芯片可被应用于60GHz宽带无线通信系统.
A wideband low noise amplifier （LNA） MMIC was designed and fabricated with 0.15μm GaAs pHEMT process. It obtains high gain by means of adopting four stages topology. The chip size is 2mm × lmm. Coyering 45 - 65GHz, it achieves a maximum 20.5dB gain and low VSWR. It has the advantages of higher gain, wider bandwidth and lower power consuming. This chip can be widely applied in 60GHz wideband wireless communication system.
基金
国家自然科学基金资助项目(批准号:07O7RGJA1001)~~
