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温度对数字电路中单粒子瞬态脉冲的影响 被引量：2

Temperature Dependence of Digital Single Event Transient
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摘要 利用三维TCAD混合模拟研究了温度对0.18μm工艺下反相器链中DSET脉冲宽度的影响.结果发现,温度对DSET的影响要比温度对SEU的影响严重得多.在LET为60MeV.cm2/mg的条件下,当温度从-55℃升高到125℃时,DSET脉冲宽度约增加了58.8%. Using mixed-mode simulation,the temperature dependence of digital single event transient （DSET）in an inverter chain has been studied. It was found that the temperature dependence of DSET is much more serious than that of SEU. When the temperature rises from -55 to 125℃ ,the width of DSET increases about 58. 8%.
作者 梁斌 陈书明 刘必慰
机构地区 国防科技大学计算机学院
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第7期1407-1411,共5页 半导体学报（英文版）
基金 武器装备预研基金资助项目(批准号:9140A08040507KG01)~~
关键词 混合模拟 DSET 超深亚微米 辐射 mixed-mode simulation DSET very deep sub-micron radiation
分类号 TN79 [电子电信—电路与系统]
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参考文献19

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Journal of Semiconductors
2008年 第7期

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