全脉冲电路气体-金属离子注入源

Gaseous-Meallic ion source for implantation in fully pulsate circuits

本文报道了新型全脉冲电路气体-金属复合离子注入源的结构和特性,采用在磁场约束条件下的脉冲引发的气体等离子体,分别引发气体放电和金属弧放电。详细描述放电过程的伏-安特性曲线,以及对引出离子束流的作用。该设备电路体积小,整体高压脉冲电源体积仅为40立方分米,外引的操作线电压低于600V,使用安全;具有单独气体离子注入,和金属离子注入的功能,适合于材料表面改性用途。

A new-type composite gaseous-metallic ion implanter was developed for fully pulsate circuit by introducing the gaseous plasma induced by the pulse which is restrained by megnetic field so as to realize the gaseous and metallic arc discharge. Discusses the construction and characteristics of the ion implanter especially its voh-ampere characteristic curve and how it leads the ion beam to flow out. The volume of its circuitry is small, and that of the whole high-voltoge pulsate power source is just 40 cubic decimeters from which the lines led out are lower than 600V with safety provided in operation. The ion implanter can be used for either gaseous or metallic ion implantation, so available to modification of lots of material surfaces.