p/i 界面的缓变层对大面积(2790cm^2)a-Si : H 太阳电池性能影响的研究

STUDY ON THE INFLUENCE OF COMPOSITION GRADED LAYER AT P/I HETERO INTERFACE ON THE PERFORMANCE OF LARGE AREA(2790cm 2) A Si∶H SOLAR CELLS

报道了在大面积（２７９０ｃｍ２）ｐ－ｉ－ｎ型ａ－Ｓｉ∶Ｈ异质结太阳电池ｐ／ｉ界面之间引入缓变层（ＣＧＬ∶Ｃ，ＣＧＬ∶Ｂ∶Ｃ）对电池性能影响的研究结果。实验发现，带有ＣＧＬ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的改善主要来源于开路电压的提高，带有ＣＧＬ∶Ｂ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的提高主要来源于填充因子ＦＦ的增加。提出了带有缓变层ａ－Ｓｉ∶Ｈ电池的能带模型，据此分析了ｐ／ｉ结附近载流子的复合动力学过程，从理论上解释了实验中所发现的现象。

This paper reports some offect of buffer layer at p/i interface on large area p i n a Si∶H solar cells.From experiments,we found that the performance of a Si∶H solar cells with CGL∶C at p/i interface was improved.This is mainly due to the increase of V oc ;the enhanced performance of a Si∶H solar cells with CGL∶B∶C at p/i interface with the increase of FF.Energy band models of a Si∶H solar cells with buffer layer were established to explain the photoexcited carrier recombination kinetics near the p/i interface,from theoretical point of view.