摘要
采用电子束蒸发法制备掺杂铈的TiO2薄膜,研究掺杂铈对TiO2薄膜的折射率、透射率和禁带宽度的影响。实验发现适量掺杂CeO2会提高薄膜的折射率;并使氧化钛薄膜的禁带宽度Eg从3.27eV减小到2.51eV,从而使光本征吸收边从380nm红移到495nm,大大提高了对太阳光的利用能力。
TiO2 thin film was successfully prepared with electron beam evaporation. The influences of refractive index, transmittance and band gap on doped TiO2 film were studied. The results indicate that adaptive Ce-doped improves the refractive index of TiO2 film; doping CeO2 makes band gap value reducing from 3.27eV to 2.5eV, resulting in the absorption edge shifting from 380nm to 495nm. In this way, more solar energy is utilized.
出处
《材料工程》
EI
CAS
CSCD
北大核心
2008年第7期15-17,共3页
Journal of Materials Engineering
基金
国家自然科学基金(50171053)
航空基础科学基金(96G53084)