摘要
采用传统陶瓷工艺制备了Fe2O3掺杂BST/MgO铁电陶瓷材料。研究了Fe2O3掺杂量对该复合体系εr、tanδ等参数的影响。结果表明,适量的掺杂能有效改善体系的电性能。控制掺杂量x(Fe2O3)为0.1%,陶瓷介质在微波频段(S波段)的εr为100.5;tanδ约为5.3×10–3;4000V/mm偏压下的调谐性可达14.2%。采用极化理论对掺杂机理进行了探讨。
Fe2O3-doped BST/MgO ferroelectric ceramics materials were prepared by using traditional ceramic technique. Effects of Fe2O3-doped amount on ε r and tan δ in this composite system were investigated. The results show that appropriate adulteration can effectively improve the electrical properties of the composite system .To control x(Fe2O3) to 0.1%, in microwave band (S band)the εr of ceramic is 100.5, and the tan δ is 5.3 × 10^-3, and the tune characteristic in 4 000 V/mm bias is 14.2%. The adulteration mechanism by polarization theory is discussed.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第7期17-19,共3页
Electronic Components And Materials
关键词
无机非金属材料
FE2O3
BST
铁电材料
移相器
non-metallic inorganic material
Fe2O3, BST
ferroelectric material
phase shifter