受主掺杂对ZnO片式压敏电阻材料性能的影响

Effects of Acceptor Addition on Electric Characteristics of ZnO Varistor Materials

研究了一价受主Li^＋对ZnO片式压敏电阻材料的电性能和晶界电参数的影响。材料中添加适量的Li^＋离子，可提高压敏电阻的非线性系数、改进器件的漏电流特性。当Li^＋离子添加量从0增加至300mol／ppm时，晶界势垒高度φB由0.7eV增加为0.87eV，晶粒中载流子浓度ND由2.2×10^23／m^3下降为8.5×10^22／m^3，ZnO的电阻率ρg由1.02Ω·cm增加为1.98Ω·cm。

Effects of Li^＋ acceptor addition on electric properties and grain boundary parameters were researched. The non-linear coefficient and leakage current characteristics of ZnO varistors could be improved by doping a proper amount of Li^＋ ions.While Li^＋ content increase from 0 to 300ppm, the barrier height increased from 0.7eV to 0.87eV, the resistivity of ZnO grains increased from 1.02Ω·cm to 1.98Ω·cm, and the carrier density in ZnO grains decreased from 2.2×10^23/m^3 to 8.5×10^22/m^3.