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MOS管工作于弱反型区时的失调分析 被引量：3

The Offset Analysis of MOSFET Biased in Weak Invertion
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摘要 在电子工业的许多产品领域(如手机、笔记本计算机等),低功耗技术很重要,而将MOS管偏置在亚阈值区是很好的途径。首先介绍了弱反型区模型,然后在定性分析失调的基础上,推导了电流镜和简单差分放大器的失调表达式,指出了MOS管工作于弱反型区时的失调因素,从而为在设计过程中如何降低失调提供了理论依据。 Low power consumption has become one of the main issue in electronic industry for many product areas such as cellular phones, protable personal computers. MOSFET biased in weak invertion is a good solution. This paper introduces weak invertion model first, then the offset expression of current mirror and simple differential amplifier is derived in the base of qualitative analysis of mismatch and points outs the offset disorders of . weak invertion in the working process of MOS, then provides the theory how to lower the offset in the design process.
作者 彭静玉
机构地区 苏州大学应用技术学院
出处 《苏州大学学报（工科版）》 CAS 2008年第3期40-43,共4页 Journal of Soochow University Engineering Science Edition (Bimonthly)
关键词 弱反型 失调 电流镜 差分对 weak invertion mismatch current mirror differential pair.
分类号 TP311 [自动化与计算机技术—计算机软件与理论]
  • 相关文献

参考文献5

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共引文献1

同被引文献32

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引证文献3

苏州大学学报（工科版）
2008年 第3期

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