摘要
研究了不同响应波长的HgCdTe器件在不同背景辐射条件下的噪声变化。随着背景辐射的增加,甚长波器件的噪声减小,而中波器件相反。噪声频谱测量表明,产生-复合噪声分量和1/f噪声分量是器件的主要噪声来源,并且这两个分量随背景的变化趋势相同。非平衡载流子和器件有效寿命的理论分析,表明器件噪声随背景辐射的变化存在一个极大值,而中波和甚长波器件处在不同的作用区域内,接受到的背景辐射对载流子浓度和器件有效寿命的影响不同,从而噪声变化表现不同。在此基础上,提出了"临界背景通量密度"的概念。
The influence of background radiation on noise of medium-wave and extremely-long-wave HgCdTe detectors is studied. It is found that the noise of extremely-long-wave detector decreases with the background radiation increasing, while for the medium-wave detector is shows the different way. Noise spectra show that the main noise sources are generation-recombination （G-R） noise and 1If noise which have the similar trend while the background is changing. The G-R noise for different wavelength response detectors is calculated using carriers and effective lifetime theory. There exists a maximum value when G-R noise changes with background radiation. While the noise is on the different position for medium-wave and extremely-long-wave detectors, the influence of background radiation on their effective lifetime is different. So noise behaves differently. Based on these, a new concept of ＂critical-background-radiation-flux-density＂ is put forward.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2008年第7期1369-1373,共5页
Acta Optica Sinica
关键词
中导体探测器
背景辐射
噪声
临界背景通量密度
HGCDTE
semiconductor detector
background radiation
noise
critical-background-radiation-flux-density
HgCdTe
