摘要
介绍了目前半导体新工艺的发展情况。在特征尺寸不断缩小的情况下,产生新的材料和技术是必要的,但也带来了相关的可靠性问题。简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
New aduances in semiconductor processes are introduced. When the Critical Dimension （CD） is scaling down, new materials and techniques are needed which may bring related reliability problems. The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
出处
《电子产品可靠性与环境试验》
2008年第3期24-27,共4页
Electronic Product Reliability and Environmental Testing
关键词
半导体工艺
应变硅
栅介质
铜互连
semiconductor process
strain silicon
gate dielectric
copper interconnect
