期刊文献+

IGBT绝缘栅双极晶体管发展简述 被引量:9

Development of IGBT
下载PDF
导出
摘要 简述了IGBT的发展概况,对比了国内外的发展现状,及国内外产品的技术特点与指标。同时,还指出了IGBT的优点,研究IGBT的重要性及其发展趋势。 This paper describes the development of IGBT, the actuality in the world, the characteristic of technology and target. Synchronously, this paper indicates the merit and fundamentality of IGBT and forecasts the market' s developments.
出处 《微处理机》 2008年第2期41-43,46,共4页 Microprocessors
关键词 绝缘栅双极晶体管 结构 现状 特点 IGBT Configuration Actuality Characteristic
  • 相关文献

参考文献3

二级参考文献12

  • 1袁寿财.辐照对IGBT特性的影响[J].半导体杂志,1996,21(3):6-11. 被引量:1
  • 2[1]Miller and J. Sack. A New Concept for a Non Punch through IGBT with MOSFET like Switching Characteristics. Records of IEEE Power Electronics Specialists, 1989:21~25
  • 3[2]Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohashi,and K. Funukawa. 1 800 V Bipolar-mode MOSFETs A First Application of Silicon Wafer Direct Bonding Technique to a Power Devices . IEDM Technical Dig. 1986: 122~125
  • 4[3]Etsuro Morita, Chizuko Okada, Shinsuke Sakai, and Yuichi Saito. On the Properties of Silicon Wafers for IGBT Use, Manufactured by Direct Bonding Method. Proceedings of ISPSD'95, 1995: 212~215
  • 5[4]Toshiba power electronics CD-ROM,2000.8
  • 6[5]Mitsubishi Electric Semiconductors Power Devices CDROM,2000.3
  • 7[6]Lorenz, Marz, Deboy . CoolMOS-an Important Milestone towards a New Power MOSFETGeneration. Power Conversion Proceedings, 1998(5): 6~10
  • 8Baliga B J, et al. IEEE/IAS Ann. Meet. Conf. Rec., 1983, P. 794-803.
  • 9钱小工.半导体技术,1990,(5).
  • 10李志晨.微电子学,1991,21(2).

共引文献12

同被引文献81

引证文献9

二级引证文献51

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部