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铜丝球焊工艺的理论与实践 被引量：4

Theory and Practice for the Technology of Copper Wire Ball Bonding
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摘要 阐述了铜丝替代金丝的理论可行性与在实际应用中所需注意的要点,如防氧化装置、防弹坑键合参数、铜丝劈刀的参数要点等,最后对铜丝球焊的可靠性及几种重要的失效模式进行了探讨分析。 Theoretical feasibility of the replacement of the gold wire by copper wire and the attention-ment in practical application was expounded, such as equipment for anti-oxidization, bonding data for anti-crater, the capillary for copper wire and so on. Finally, reliability and some main failure mechanisms of copper ball bonding was analysed and discussed.
作者 林刚强
机构地区 浙江华越芯装电子股份有限公司
出处 《电子工业专用设备》 2008年第7期10-14,共5页 Equipment for Electronic Products Manufacturing
关键词 铜线焊接 防氧化 铜丝劈刀 机台参数 失效机理 Copper Wire Bonding anti-oxidization CapilLary to Copper Wire Machine Data fail-ure mechanisms
分类号 TG454 [金属学及工艺—焊接]
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参考文献9

  • 1Caers, J.E.J.M., Bischoff, A., FalK, J., Roggen, J. Conditions for reliable ball□ wedge copper wire bonding [C]. Source: IEEE/CHMT European International Electronic Manufacturing Technology Symposium, 1993, p 312-315.
  • 2Jin Onuki, Mssahiro Koizumi. Investigation of the reliability of copper ball bonds to aluminum electrodes [J]. IEEE transactions on components, hybrids and manufacturing technology, CHMT - 12,1987,(4):550-555.
  • 3Inderjit singh, J.Y.On, Lee Levine ." Enhancing Fine Pitch, High I/O Devices with Copper Ball Bonding[Z]. Proceedings ECTC May 31,2005, TP 178
  • 4Deley, M. Levine, L.The emergence of high volume copper ball bonding[C]. Electronics Manufacturing Technology Symposium, 2004. IEEE/CPMT/SEMI 29th International, Publication Date: July 14-16, 2004 On page(s): 186- 190.
  • 5Wulff, F. W .,Breach, C. D, Stephan, D., Saraswati, Dittmer, K., & Gamier, M.Further Characterisation of Intermetallic Growth in Copper and Gold Ball Bonds on Aluminium Metallisation [Z].Proc SEMICOC^ ingapore 2005, Singapore, May 2005.
  • 6TAN C W, DAUD A R.Bond pad cratering study by reli ability tests [J].Journal of materials science, 2002, (13). 309-314.
  • 7Gu X, Joze Antol, Yao Y F et al . A reliable wire bond ing on 130 um Cu/low-k device [J] . 2003 electronics packaging technology conference, 2003,707-712.
  • 8Wulff, F.W.Breach, C.D.Stephan, D.Saraswati Dittmer, K.J.Characterisation of intermetallic growth in copper and gold ball bonds on aluminium metallization[c].Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th, On page(s): 348- 353.
  • 9Murali S,Srikanth N, Charles J. Vath Grains, deformation substructures, and slip bands observed in themosonic copper ball bonding[J]. Materials characterization 2003(50):39-50.

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电子工业专用设备
2008年 第7期

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