摘要
A four-state memory can store four states in each memory cell. We designed a four-state memory cell using Co/PZT magnetoelectric composite and observed a broad magnetoelectric hysteretic output loop on applying magnetic field. Based on magnetoelectric hysteresis, we developed a read method by ap- plying a bias magnetic field on the memory cell. Results gave clearly four-state signals of 15.8, -4.4, 5.5 and -11.3 μV, which demonstrated the feasibility of our design.
A four-state memory can store four states in each memory cell. We designed a four-state memory cell using Co/PZT magnetoelectric composite and observed a broad magnetoelectric hysteretic output loop on applying magnetic field. Based on magnetoelectric hysteresis, we developed a read method by applying a bias magnetic field on the memory cell. Results gave clearly four-state signals of 15.8, -4.4, 5.5 and -11.3μV, which demonstrated the feasibility of our design.
基金
Supported by the Hi-Tech Research and Development Program of China (Grant No. 2006AA03Z101)
National Natural Science Foundation of China (Grant No. 50571084)
关键词
磁电效应
电磁复合材料
四态记忆
器械
multiferroic, magnetoelectric composite, four state memory, device, read
