摘要
文章设计了一种应用于D/A转换器芯片中的带隙基准电压电路,在3 V工作电压下具有极低的温度系数,输出电压低于传统带隙基准电路。该电路改进了传统带隙基准电路,减小了运放失调和电路误差,通过电阻二次分压降低了基准输出电压。在SMIC 0.35μm CMOS工艺下,使用Hspice进行了仿真。仿真结果表明:该基准的温度系数在-40-100℃的范围内仅为3.6×10^-6/℃;电源电压在2.7-3.3 V之间变化时,电源抑制比为52 dB。该文设计的带隙基准电压源完全符合设计要求,是一个性能良好的基准电路。
This paper presents a bandgap voltage reference circuit used in the D/A converter, which has a very low temperature coefficient and an output lower than traditional bandgap reference's at a supply voltage of 3 V. The circuit improves the traditional bandgap reference circuit, minimizes amplifier maladjustment and circuit mismatch, and reduces the reference's output by resistance's voltage distribution. The circuit in a SMIC 0.35 um CMOS process is simulated by Hspice tools. Simulation results show that the reference's temperature coefficient is only 3.6 × 10^-6/℃ at the temperature from -40 ℃ to 100 ℃ ,and that the power supply rejection ratio is 52 dig when the power supply changes from 2.7 V to 3.3 V. The bandgap voltage reference designed in this paper completely accords with the requirement of design and is a reference with good performance.
出处
《合肥工业大学学报(自然科学版)》
CAS
CSCD
北大核心
2008年第7期1128-1130,1144,共4页
Journal of Hefei University of Technology:Natural Science
关键词
带隙基准电压源
温度系数
基准输出
电源抑制比
bandgap voltage reference
temperature coefficient
reference's output
power supply rejection ratio