Ti2AlNb／GH4169真空扩散连接初步研究

Study on Vacuum Diffusion Bonding of Ti_2AlNb/GH4169

在950℃、5MPa、1h的工艺条件下,分别添加Mo、Ta、Nb箔做中间层,对Ti2AlNb与GH4169真空扩散连接工艺进行了研究。利用扫描电镜(SEM)和能谱分析(EDS)等方法对焊接接头成形机理进行了分析。结果表明,以Mo做中间层时接头开裂;以Ta、Nb做中间层时形成完整接头,其中,Ta或Nb中间层与Ti2AlNb连接良好,而与GH4169界面出现裂纹。

By inserting metal foils of Mo, Ta or Nb as interlayer,the joints of Ti2AlNb and GH4169 were formed by vacuum diffusion bonding under the conditions of temperature 950℃, axial pressure 5MPa and holding time lh. The joints microstructures and bonding mechanism were studied by SEM and EDS analyses. The results show that the joint cracks when Mo as interlayer; whereas Ta and Nb foils maue the joints integrat though cracks are still found at Ta-（or Nb-） GH4169 faying interface.