用于MEMS热敏传感器中绝热层的多孔硅性能研究

Study on Performance of Porous Silicon Used in Thermal Isolation Layer of Micro Thermal Sensor

利用电化学方法制备了多孔硅,利用显微拉曼光谱法测量多孔硅样品的热导率和多孔硅中的残余应力,利用纳米压入测量仪测量多孔硅显微硬度与弹性模量。研究了多孔硅绝热性能和力学性能与微观结构的关系,认为通过控制制备条件可以得到绝热性能和力学性能满足MEMS热敏传感器结构性能要求的多孔硅。

Using the electrochemical method porous silicon was prepared, thermal conductivity and residual stress of porous silicon were scaled by Micro-Raman Spectroscopy （MRS）. Using MTS nano indenter XP, the average value of hardness ＆Young＇s modulus of porous silicon were measured. The relationship between micro structural parameter and its property of mechanical and thermal insulation were researched. The PS had excellent property of thermal insulation and mechanical can be prepared by control conditions, and it can be used in thermal isolation layer of micro thermal sensor.