晶圆切割中背面崩裂问题的分析

Analysing Backside Chipping Issues of the Die at Sawing

半导体技术不断发展,越来越多的新材料、新工艺应用在晶圆制造中。这对封装核心工序的划片工艺提出了很大挑战。在划片工艺中背面崩裂的控制是一个难点。文章主要是从工艺材料、工艺条件、划片刀以及设备四方面分析产生背面崩裂的主要因素以及优化方法。同时介绍了两种控制背面崩裂较有效的切割工艺:减少应力的开槽切割工艺和DBG工艺。

With IC technologies evolving, many new materials and new process are used for the manufacture of silicon wafer. It＇s a great challenge to the wafer saw process. Backside chipping is very difficult to be controlled at wafer saw process, This paper has explained a number of causes that leads to backside chipping during wafer sawing from the area of material, process, blade and equipment. And finally it introduces two effective methods to control backside chipping： Stress Relief Step Cutting and Dicing Before Grinding.