摘要
文章对0.5μm一次编程存储器(OTP)存储单元的器件结构、工艺流程、存储单元器件特性及可靠性提高等方面进行了研究。在一定的编程条件下,编程0.1ms时器件的阈值电压能够大于6V,控制栅或漏极加电压10s时阈值电压退化量小于0.1V,因此器件的编程速度和编程串扰特性能够满足要求。通过改善浮栅和控制栅层间介质氧化硅-氮化硅-氧化硅(ONO)的质量及采用存储单元覆盖氮化硅保护层等优化措施,存储单元的数据保持能力能够大于10年。
This paper introduce 0.5 μm OTP （One Time Program Memory） cell device structure, process, cell device characteristic and cell data retention improvement. With given program condition, Vt could higher than 6V after 0.1ms program and Vt decrease could lower than 0.1V after control gate or drain stress 10s, so cell program speed and program disturb characteristic could reach target. Through ONO quality improvement and cell surrounding by SIN liner, cell data retention ability could longer than 10 years.
出处
《电子与封装》
2008年第7期34-38,共5页
Electronics & Packaging
