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GaI2(X^2A1)分子的结构与势能函数 被引量:3

Structure and Potential Energy Function Investigation on GaI_2 Molecule
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摘要 应用密度泛函理论B3P86和B3LYP,利用多种基组对GaI2分子的基态平衡结构进行优化,并用优选出的密度泛函B3P86/3-21G方法对该分子的离解能、谐振频率和力常数进行了计算.结果发现GaI2(X2A1)分子的基态稳定构型为C2V,其平衡核间距Re=0.26225 nm、∠IGaI=122.8135°,离解能为1.5303 eV,谐振频率为ω1(a1)=54.7691 cm-1、ω2(a1)=179.4269 cm-1、ω3(b2)=248.9129 cm-1,力常数为fR1R1=0.08995 a.u.,fR1R2=0.01238 a.u.,fR1α=-0.01335 a.u.,fαα=0.01362 a.u..在推断出GaI2的离解极限基础上,应用多体展式理论方法,推导出基态GaI2分子的分析势能函数,该势能表面准确地再现了分子GaI2(X2A1)的结构特征和能量变化.分析讨论势能面的静态特征时得到:GaI+I→GaI2反应中存在鞍点,活化能为144.728 kJ/mol. The density-functional theory (B3P86,B3LYP) are used to optimize the ground-state structure of GaI2, and then B3P86 method is employed to calculate further. The results show that the ground state of GaI2 is of C2v symmetry and of X^2A1 state, the equilibrium bond length RGa-I equals 0. 262 25 nm, the bond angle ∠IGaI equals 122. 813 5° and dissociation energy is 1. 530 3 eV, and its harmonic frequencies are ω1 (a1) = 54. 769 1cm^-1 ,ω2 (a1) = 179. 426 9 cm^-1 ,ω3 (b2) = 248. 912 9 cm^-1 ,and force constants are fR1R1 = 0. 089 95a. u. ,fR1R2 = 0. 012 38 a. u. ,fR1a = -0. 013 35 a. u. ,faa = 0. 013 62 a. u. respectively. The present paper correctly determines the dissociation limits, based on group theory and atomic and molecular reactive statics (AMRS). Analytical potential energy function for the ground state X^2 A1 of GaI2 has been derived using many- body expansion method. The structure and energy of GaI2 can correctly reappear on the potential surface. Molecular reaction kinetics of GaI+ I based on the potential energy functions is discussed briefly.
作者 蒋利娟
机构地区 新乡学院物理系
出处 《河南师范大学学报(自然科学版)》 CAS CSCD 北大核心 2008年第4期77-79,共3页 Journal of Henan Normal University(Natural Science Edition)
基金 河南省高校杰出科研人才创新工程(2006KYCX002)
关键词 GaI2 多体项展式理论 势能函数 GaI2 many-body expansion theory analytical potential energy function
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参考文献9

  • 1何军,郑浩平.GaN及其Ga空位的电子结构[J].物理学报,2002,51(11):2580-2588. 被引量:11
  • 2王焕荣,叶以富,闵光辉,滕新营,石志强,秦敬玉.共晶Ga-In合金的液态结构与粘度研究[J].金属学报,2001,37(8):801-804. 被引量:10
  • 3张海涛,刘让苏,陈晓莹,杜生海,侯兆阳,张爱龙.液态金属Ga急冷凝固中微观结构转变的模拟研究[J].原子与分子物理学报,2005,22(3):449-455. 被引量:3
  • 4Taki T, Koukitu. Atomic layer epitaxy of GaAs using GaBr and Gal sources[J]. Applied Surface Science, 1997,112:127-131.
  • 5Dutta A, Bhattacharjee J, Das K K. A^3+Σ0^+ - X^1Σ0^++ and B3Π1 - X^1Σ0^++ transitions of GaI: an MRDCI study[J]. Chemical Physics Letters, 1999,314:347- 352.
  • 6Yang X Z, Lin M R, Zhang B Z. MR-AQCC study on the ground and low-lying excited states of GaI[J]. Chemical Physics Letters, 2003,382 : 160-166.
  • 7Ran M, Zhu Z H, Jiang G, et al. Molecular potential energy function and reaction dynamics for LaH2 (C2v ,X^2A1)[J]. Journal of Molecular Structure, 2000,553 : 281 - 290.
  • 8Wang R, Sheng Y, Yang C L,et al. The molecular structure and the analytical potential energy function of C3^+ (X^2B2) and C3^-(X^2Πg) [J]. Journal of Molecular Structure( Theochem), 2002,587 : 25-31.
  • 9王红艳,朱正和,傅依备,汪小琳,孙颖.基态UC_2分子的结构和势能函数[J].Chinese Journal of Chemical Physics,2003,16(4):265-269. 被引量:8

二级参考文献52

  • 1易双萍,刘让苏,李基永,董科军.液态金属Ga的快速凝固模拟[J].中国有色金属学报,2001,11(z2):257-260. 被引量:2
  • 2刘让苏,覃树萍,侯兆阳,陈晓莹,刘凤翔.液态金属In凝固过程中微观结构转变的模拟研究[J].物理学报,2004,53(9):3119-3124. 被引量:13
  • 3[1]Hirsch M T, Wolk J A, Walukiewicz W and Haller E E 1997 Appl. Phys. Lett. 71 1098
  • 4[2]Vogel D, Kruger P and Pollmann J 1997 Phys. Rev. B 55 12836
  • 5[3]der Kellen S B and Freeman A J 1996 Phys. Rev. B 54 11187
  • 6[4]Lambrecht W R L and Segall B 1994 Properties of Group Ⅲ Nitrides ed by J H Edgar (London:IEE) p125
  • 7[5]Fiorentini V, Methfessel M and Scheffler M 1993 Phys. Rev. B 47 13353
  • 8[6]Christensen N E and Gorzyca I 1994 Phys. Rev. B 50 4397
  • 9[7]Yuan J S et al 2001 Acta Phys. Sin. 50 2429(in Chinese) [苑进社等 2001 物理学报 50 2429]
  • 10[8]Xu Y N and Ching W Y 1993 Phys. Rev. B 48 4335

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