γ-Y_2Si_2O_7陶瓷材料介电性能研究

Dielectric properties of γ-Y_2Si_2O_7 ceramic material

以溶胶-凝胶法制备的纳米SiO2颗粒和微米Y2O3为原料,在高能行星磨上球磨混合粉末(摩尔比2∶1),冷压成型后烧结,制备出纯相γ-Y2Si2O7。借助X射线衍射、扫描电镜、能谱等方法研究了该材料的低温烧结行为。结果表明,该材料能够在1350℃下低温烧结出纯相γ-Y2Si2O7。用谐振腔法在X波段测试了γ-Y2Si2O7的介电性能。结果表明,该材料具有良好、稳定的介电性能。

Pure phase γ-Y2Si2O7 ceramics were developed by sintering mixed -powder with nano -SiO2 and micron - Y2O3 （ mol ratio = 2：1 ） after cool - pressure forming. Many methods such as XRD, SEM and EDS were used to study its low temperature sintering behavior. The results showed that the material could be sintered at low temperature 1 350℃. The dielectric properties of γ-Y2Si2O7 were measured by high Q - cavity method at the frequency of X - band. The results showed the material have good and stable dielectric properties.