低能电子束光刻的Monte Carlo模拟

Monte Carlo Simulation of low-energy Electron Beam Lithography

利用Mott截面和介电函数模型,借助Monte Carlo方法模拟了电子在光刻胶PMMA和衬底中的弹性散射和非弹性散射.通过统计电子的能量沉积分布,发现低能电子的大部分能量沉积在光刻胶中而非衬底,所以在电子束光刻中有着更高的效率.并且还得到了在不同的入射电子能量下,光刻胶完全曝光所对应的的最佳厚度.

The Monte Carlo method on low- energy electron scattering in PMMA and substrate is used. The Mott cross - section applies for describing the elastic scattering, and the dielectric function method to describe inelastic scattering. Through simulating electrons scattering progress and deposited energy distribution, the authors found that the low- energy electron beam is the evident mode of exposure, because low - energy dectrons lost a large part of energies in PMMA. In addition the optimized thickness of PMMA is obtained in different energies of incident electron.