一种高阶温度补偿的CMOS带隙参考源(英文)

A High-Order Temperature Compensated CMOS Bandgap Reference

介绍了一种基于CSMC 0.5-μm 2P3M n-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源。该CMOS带隙参考源利用了Buck电压转换单元和与温度无关的电流,提供了一种对基极-发射极电压VBE的高阶温度补偿。它还采用共源共栅结构以提高电源抑制比。在5 V电源电压下,温度变化范围为-20～100℃时,该带隙参考源的温度系数为5.6ppm/℃。当电源电压变化范围为4～6V时,带隙参考源输出电压的变化为0.4mV。

A high-order temperature compensated bandgap reference （BGR） based on CSMC 0.5-μm 2P3M n-well mixed signal CMOS process is presented. This novel proposed CMOS bandgap reference takes advantage of both a Buck＇s voltage transfer cell and a temperature independent current, to provide a high-order temperature compensation of the base-emitter voltage VBE. Cascode structures are also introduced in this CMOS bandgap reference to improve the power supply rejection ratio （PSRR）. This circuit achieves 5.6 ppm/℃ of temperature coefficient with temperature range from - 20 to 100℃ at 5 V power supply. The variation in the output voltage of the bandgap reference is 0.4 mV when power supply changes from 4 V to 6 V.